bas 16 mar-02-2001 1 silicon switching diode for high-speed switching applications 1 2 3 vps05161 13 eha07002 type marking pin configuration package bas 16 a6s 1 = a 2 n.c. 3 = c sot-23 maximum ratings parameter symbol unit value diode reverse voltage v r v 75 peak reverse voltage v rm 85 250 ma forward current i f surge forward current, t = 1 s i fs 4.5 total power dissipation , t s = 54 c p tot mw 370 150 t j c junction temperature storage temperature t st g -65 ... 150 thermal resistance junction - ambient 1) r thja 330 k/w 260 junction - soldering point r thjs 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 16 mar-02-2001 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) - - - v forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma v f - - - - - - - - 715 855 1000 1250 mv reverse current v r = 70 v i r - - 1 a reverse current v r = 25 v, t a = 150 c v r = 75 v i r - - - - 30 50 forward recovery voltage i f = 10 ma, t p = 20 ns v fr - - 1.75 v ac characteristics diode capacitance v r = 0 v, f = 1 mhz c d - - 2 pf reverse recovery time i f = 10 ma, i r = 10 ma, r l = 100 , measured at i r = 1ma t rr - - 6 na test circuit for reverse recovery time ehn00017 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 oscillograph: r = 50 , t r = 0.35ns, c 1pf
bas 16 mar-02-2001 3 reverse current i r = f ( t a ) 10 10 10 0 50 100 150 bas 16 ehb00022 na t a r c 10 10 5 4 3 2 1 5 5 5 25 v 70 v max. = 70 v r v typ. forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00021 bas 16 f a t ; t s 50 100 c 150 t as t 100 200 ma 300 forward current i f = f ( v f ) t a = 25c 0 0 ehb00023 bas 16 0.5 1.0 v 1.5 50 100 ma 150 f f v max typ peak forward current i fm = f ( t p ) t a = 25c 10 ehb00024 fm t -2 -6 10 d = 0.005 0.01 0.02 t d = t bas 16 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s -1 10 0 10 1 10 2 10 a t p t p 0.05 0.1 0.2
bas 16 mar-02-2001 4 forward voltage v f = f ( t a ) 0 0.5 1.0 0 50 100 150 bas 16 ehb00025 v t a v f c f = 100 ma 10 ma 1 ma 0.1 ma
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